Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells

Abstract. Strong Shubnikov-de Haas (SdH) oscillations were observed in the derivative of microwave absorption (f=10  GHz) in InAs/GaSb/AlSb composite quantum wells (CQWs) using electron-paramagnetic resonance spectroscopy at low temperatures (2.7 to 20 K) and in the magnetic field up to 14 kOe. CQWs were grown on n-GaSb:Te(100) and n-InAs:Mn(100) substrates with various widths of QWs by MOVPE. A predominant contribution to the bulk n-GaSb substrate in SdH oscillations was manifested. Two frequencies of the SdH oscillations connected with warping of the Fermi surface of GaSb were found from Fourier analysis. An unusual angular indicatrix was observed in dependence on the orientation of the samples grown on n-GaSb in the magnetic field. The obtained results can be explained by bulk inversion asymmetry, which is a feature of substances with a lack of inversion centers. For CQWs grown on n-InAs:Mn substrate, only several SdH oscillations with higher period were observed. We succeeded in extracting a contribution of the two-dimensional carriers of InAs QW∼H⊥, where H⊥=H·cos Θ, from bulk substrate oscillations using a special spline interpolation from the angular dependence of SdH oscillatory amplitudes in the angle range of 0 to 90 deg.

[1]  L. Esaki,et al.  Electronic properties of InAs_GaSb superlattices , 1980 .

[2]  Chaoxing Liu,et al.  Quantum spin Hall effect in inverted type-II semiconductors. , 2008, Physical review letters.

[3]  D. G. Seiler,et al.  Inversion-Asymmetry Splitting of the Conduction Band in GaSb from Shubnikov-de Haas Measurements , 1970 .

[4]  Rui-Rui Du,et al.  Observation of edge transport in the disordered regime of topologically insulating InAs/GaSb quantum wells. , 2014, Physical review letters.

[5]  Brian R. Bennett,et al.  Evidence of a Hybridization Gap in ``Semimetallic'' InAs/GaSb Systems , 1997 .

[6]  K. D. Moiseev,et al.  Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions , 2004 .

[7]  N. D. Stoyanov,et al.  SUPERLINEAR ELECTROLUMINESCENCE DUE TO IMPACT IONIZATION IN GASB-BASED HETEROSTRUCTURES WITH DEEP AL(AS)SB/INASSB/AL(AS)SB QUANTUM WELLS , 2012 .

[8]  N. A. Yuzeeva,et al.  Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an InxGa1 − xAs quantum well with InAs inserts , 2015 .

[9]  Jacek K. Furdyna,et al.  Effects of Photon-Momentum and Magnetic-Field Reversal on the Far-Infrared Electric-Dipole Spin Resonance in InSb , 1983 .

[10]  Leo Esaki,et al.  Electronic properties of InAsGaSb superlattices , 1980 .

[11]  L. E. Golub,et al.  Giant Spin Relaxation Anisotropy in Zinc-Blende Heterostructures , 1999 .

[12]  Yehuda Naveh,et al.  Band‐structure tailoring by electric field in a weakly coupled electron‐hole system , 1995 .

[13]  G. Sullivan,et al.  Evidence for helical edge modes in inverted InAs/GaSb quantum wells. , 2011, Physical review letters.

[14]  M. O. Manasreh,et al.  Electron paramagnetic resonance study of the two‐dimensional electron gas in Ga1−xAlxSb/InAs single quantum wells , 1993 .

[15]  M. Mikhailova,et al.  Type II heterojunctions in the GaInAsSb/GaSb system , 1994 .

[16]  G. Biskupski,et al.  Distinctive features of the magnetoresistance of degenerately doped n-InAs and their influence on magnetic-field-dependent microwave absorption , 1998 .

[17]  H. Kroemer.  The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review , 2004 .

[18]  Chang,et al.  Electronic states and quantum Hall effect in GaSb-InAs-GaSb quantum wells. , 1987, Physical review. B, Condensed matter.

[19]  Pavel Hubík,et al.  Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy , 2004 .

[20]  K. D. Moiseev,et al.  Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields , 2009 .

[21]  E. J. Mele,et al.  Quantum spin Hall effect in graphene. , 2004, Physical review letters.

[22]  de Andrada e Silva Ea,et al.  Conduction-subband anisotropic spin splitting in III-V semiconductor heterojunctions. , 1992 .

[23]  C. Kane,et al.  Topological Insulators , 2019, Electromagnetic Anisotropy and Bianisotropy.

[24]  de Andrada e Silva EA.  Conduction-subband anisotropic spin splitting in III-V semiconductor heterojunctions. , 1992, Physical review. B, Condensed matter.

[25]  K. D. Moiseev,et al.  Energy spectrum and quantum magnetotransport in type-II heterojunctions , 2004 .

[26]  Sergey Mikhailov,et al.  Miniature quantum-well microwave spectrometer operating at liquid-nitrogen temperatures , 2005 .

[27]  Werner Wegscheider,et al.  Insulating state and giant nonlocal response in an InAs/GaSb quantum well in the quantum Hall regime. , 2014, Physical review letters.