Correlated Single Electron Tunneling In Ultrasmall Junctions

Tunneling of electrons in a macroscopic tunnel junction is a stochastic process governed by several parameters. Of main importance is the tunneling barrier — its width and height, intermediate states in the barrier, dielectric constant, etc — and the applied voltage. Also the density of electron states of the electrodes (including the possible effect of superconductivity) and environmental parameters like the temperature and the bias circuit come into play. However, the number of tunneling electrons per unit time is very large in a usual tunnel junction and we need not care about single tunneling events. Modern micro-electronic fabrication technology makes it possible to realize small tunnel junctions such that the tunneling of a single electron requires a significantly large energy.

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