论文信息 - Role of incorporated hydrogen in non-stoichiometric photo-deposited silicon nitride films - 字舞流文

Role of incorporated hydrogen in non-stoichiometric photo-deposited silicon nitride films

H. K. Sehgal | P. Srivastava | O. P. Agnihotri | B. Sahu

[1] S. Mukhopadhyay,et al. Low temperature silicon oxide and nitride for surface passivation of silicon solar cells , 2002 .

[2] M. Pérez-Amor,et al. Photo-induced deposition and characterization of variable bandgap a-SiN:H alloy films , 2000 .

[3] Johannes G.E. Gardeniers,et al. LPCVD silicon‐rich silicon nitride films for applications in micromechanics, studied with statistical experimental design* , 1996 .

[4] K. S. Chari,et al. Photo-processing of silicon nitride , 1995 .

[5] H. Hartnagel,et al. Comparison of photo- and plasma-assisted passivating process effects on GaAs devices by means of low-frequency noise measurements , 1995 .

[6] R. Padmanabhan,et al. Photochemical vapor deposition of silicon nitride films , 1986 .

[7] A. Scharmann,et al. The role of hydrogen in silicon nitride and silicon oxynitride films , 1985 .

[8] E. M. Yee,et al. Low Temperature Photo Chemical Vapor Deposition (CVD) Oxide For Interlevel Insulator Applications , 1982, Photonics West - Lasers and Applications in Science and Engineering.

[9] W. Lanford,et al. The hydrogen content of plasma‐deposited silicon nitride , 1978 .