A DC-11.5 GHz Low-Power, Wideband Amplifier Using Splitting-Load Inductive Peaking Technique

A DC-11.5 GHz low-power amplifier is developed in commercial 0.13 mum, CMOS technology. This amplifier design is based on a three-stage shunt-feedback inverter-configuration with splitting load inductive peaking technique. The peaking inductor is placed at the gate of the nMOS to compensate gain roll-off of the inverter stage and extend its operating bandwidth. This amplifier achieves a gain flatness of 13.21 dB from dc to 11.5 GHz with I/O return losses better than 17 dB at a power consumption of 9.1 mW. The measured noise figure is less than 5.6 dB between 1-11 GHz. The output P1 dB is 8 dBm and input third-order intercept point is 10 dBm. The total chip size is 0.34 mm2 including all testing pads, with a core area of only 0.08 mm2.

[1]  Behzad Razavi,et al.  Stacked inductors and transformers in CMOS technology , 2001 .

[2]  Shen-Iuan Liu,et al.  Miniature 3-D inductors in standard CMOS process , 2002, IEEE J. Solid State Circuits.

[3]  Shen-Iuan Liu,et al.  CMOS wideband amplifiers using multiple inductive-series peaking technique , 2005 .

[4]  K. Washio,et al.  A 3-10 GHz bandwidth low-noise and low-power amplifier for full-band UWB communications in 0.25- /spl mu/m SiGe BiCMOS technology , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

[5]  A. Bevilacqua,et al.  An ultra-wideband CMOS LNA for 3.1 to 10.6 GHz wireless receivers , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[6]  P. Kinget,et al.  Low power programmable-gain CMOS distributed LNA for ultra-wideband applications , 2005, Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005..

[7]  Hong You,et al.  Optimization of high Q integrated inductors for multi-level metal CMOS , 1995, Proceedings of International Electron Devices Meeting.

[8]  Huei Wang,et al.  A low-voltage and variable-gain distributed amplifier for 3.1-10.6 GHz UWB systems , 2006 .

[9]  F. Ellinger,et al.  A low power DC-7.8 GHz BiCMOS LNA for UWB and optical communication , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[10]  A. Ismail,et al.  A 3 to 10 GHz LNA using a wideband LC-ladder matching network , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).

[11]  A. Neviani,et al.  A fully integrated differential CMOS LNA for 3-5-GHz ultrawideband wireless receivers , 2006, IEEE Microwave and Wireless Components Letters.

[12]  C.-H. Lee,et al.  A very low power SiGe LNA for UWB application , 2005, IEEE MTT-S International Microwave Symposium Digest, 2005..

[13]  J.D. Cressler,et al.  A 3-10 GHz SiGe resistive feedback low noise amplifier for UWB applications , 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

[14]  Mark Ingels,et al.  A CMOS 18 THz/spl Omega/ 248 Mb/s transimpedance amplifier and 155 Mb/s LED-driver for low cost optical fiber links , 1994 .