Distributed Collaborative Environments for 21st Century Modeling & Simulation

A high-breakdown voltage MOSFET has source and drain layers arranged to interpose a channel region therebetween in a channel-length direction and to have LDD portions having a low carrier-impurity concentration, respectively, on sides facing each other. A gate electrode faces the channel region through an insulating film. The LDD portion of the drain layer has a lower carrier-impurity concentration and a longer length in the channel-length direction, than those of the LDD portion of the source layer.