Low voltage CMOS compatible power MOSFET for on-chip DC/DC converters

1 A lateral Power MOSFET switch, implemented in a 0.25 /spl mu/m-5 metal CMOS process and suitable for high-frequency switch mode on-chip DC/DC converters is described in this paper. The fabricated device has an active chip area of 130 /spl mu/m/spl times/130 /spl mu/m and exhibits an on-resistance of 40.37 m/spl Omega/ (a specific on-resistance of 6.82 /spl mu//spl Omega/cm/sup 2/) and a total gate charge of 0.105 nC at V/sub GS/=3.3 V.

[1]  Richard K. Williams,et al.  Scaling issues in lateral power MOSFETs , 1998, Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212).

[2]  A. Hori,et al.  A self-aligned pocket implantation (SPI) technology for 0.2- mu m dual-gate CMOS , 1992, IEEE Electron Device Letters.

[3]  Anantha P. Chandrakasan,et al.  Data driven signal processing: an approach for energy efficient computing , 1996, Proceedings of 1996 International Symposium on Low Power Electronics and Design.