Advanced ECL with new active pull-down emitter-followers

Approaches to high-speed and high-load driving capability of bipolar logic gates are discussed. Several circuits are investigated. It is shown that the Emitter Coupled Logic (ECL) with FET pull-down emitter-followers has a 3-5 times greater capability of driving capacitive loads than the conventional one. The performance improvement is drastically enhanced when applied to GaAs LSIs.<<ETX>>