论文信息 - Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices - 字舞流文

Comparative Assessment of GST and GeTe Materials for Application to Embedded Phase-Change Memory Devices

J. Nodin | J. Cluzel | A. Roule | S. Maitrejean | L. Perniola | B. De Salvo | A. Fantini | D. Bensahel | G. Reimbold | S. Lhostis | P. Mazoyer | F. Boulanger | A. Persico | V. Sousa | C. Jahan | M. Armand | C. Dressler