论文信息 - MOCVD of Wide Bandgap III-V Semiconductors by using Novel Precursors

MOCVD of Wide Bandgap III-V Semiconductors by using Novel Precursors

Thin films of aluminum nitride have been grown by metalorganic chemical vapor deposition (MOCVD) from diethylaluminum azide. Growth rates of AIN on Si(111) were monitored in-situ with laser interferometry. The growth rate was linear in the partial pressure of the reactant at high temperatures and sublinear at low temperatures. A simple surface reaction mechanism consistent with these observations has been proposed. Surface reaction kinetics and mechanism were further investigated by steady-state kinetic mass spectrometry. Parameters in the growth rate expression were determined by a nonlinear regression of growth rate data. A typical sample of AIN on B-plane sapphire showed a bandgap of about 5.2eV which was increased to 5.9eV upon annealing in nitrogen at atmosphere pressure.

[1] J. Kouvetakis,et al. Chemical Vapor Deposition of Gallium Nitride from Diethylgallium Azide , 1989 .

[2] R. Nuzzo,et al. Surface organometallic chemistry in the chemical vapor deposition of aluminum films using triisobutylaluminum: /beta/-hydride and /beta/-alkyl elimination reactions of surface alkyl intermediates , 1989 .

[3] N. Lewis,et al. Preparation and Properties of Aluminum Nitride Films Using an Organometallic Precursor , 1989 .

[4] M. Lin,et al. OMVPE of GaN and AIN films by metal alkyls and hydrazine , 1986 .

[5] M. Khan,et al. Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition , 1983 .

[6] D. C. Boyd,et al. Organometallic azides as precursors for aluminum nitride thin films , 1989 .

[7] D. C. Boyd,et al. New Precursors for the Organometallic Chemical Vapor Deposition of Aluminum Nitride , 1988 .

[8] J. Karpinski,et al. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN , 1984 .

[9] R. Smith,et al. Wave Mechanics of Crystalline Solids , 1961 .