Excellent charge offset stability in Si-based SET transistors

We have obtained a large improvement in one aspect of the single-electron tunneling (SET) charge offset, Q/sub 0/, problem. The long-term drift of Q/sub 0/ makes it infeasible or impossible to integrate many devices. In contrast to metal-based SET transistors (SETTs), the long-term drift in Si-based SETTs appears to be at least one thousand times smaller (better).