Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors.
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A. Sinitskii | J. Bird | A. Lipatov | P. Dowben | U. Singisetti | J. Avila | M. Asensio | R. Dixit | B. Barut | S. Yin | J. Nathawat | M. Randle | N. Arabchigavkani | K. He | C.-P. Kwan | T. Komesu | Avinash Kumar