Genetic design of enhanced valley splitting towards a spin qubit in silicon

[1]  M. Lagally,et al.  Nanoscale Distortions of Si Quantum Wells in Si/SiGe Quantum‐Electronic Heterostructures , 2012, Advanced materials.

[2]  A. Zunger,et al.  Genomic design of strong direct-gap optical transition in Si/Ge core/multishell nanowires. , 2012, Nano letters.

[3]  Alex Zunger,et al.  Genetic-algorithm discovery of a direct-gap and optically allowed superstructure from indirect-gap Si and Ge semiconductors. , 2012, Physical review letters.

[4]  M. Nestoklon,et al.  Anomalous Suppression of Valley Splittings in Lead Salt Nanocrystals , 2011, 1112.0056.

[5]  Mark A. Eriksson,et al.  Embracing the quantum limit in silicon computing , 2011, Nature.

[6]  T. Boykin,et al.  Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells , 2011, 1110.4097.

[7]  R. S. Ross,et al.  Measurement of valley splitting in high-symmetry Si/SiGe quantum dots , 2010, 1012.1363.

[8]  I. Chuang,et al.  Quantum Computation and Quantum Information: Bibliography , 2010 .

[9]  S. Sarma,et al.  Interface roughness, valley-orbit coupling, and valley manipulation in quantum dots , 2010, 1006.5448.

[10]  S. Sarma,et al.  Intervalley coupling for interface-bound electrons in silicon: An effective mass study , 2010, 1006.3338.

[11]  S. N. Coppersmith,et al.  Theory of valley-orbit coupling in a Si/SiGe quantum dot , 2009, 0902.0777.

[12]  S. Sarma,et al.  Physical mechanisms for interface-mediated intervalley coupling in Si , 2009, 0901.4702.

[13]  Gerhard Klimeck,et al.  Valley splitting in Si quantum dots embedded in SiGe , 2008, 0808.1234.

[14]  T. Boykin,et al.  Valley splitting in finite barrier quantum wells , 2008 .

[15]  Alex Zunger,et al.  Band-gap design of quaternary (In,Ga)(As,Sb) semiconductors via the inverse-band-structure approach. , 2008, Physical review letters.

[16]  Gerhard Klimeck,et al.  Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder , 2007 .

[17]  S. Coppersmith,et al.  Controllable valley splitting in silicon quantum devices , 2006, cond-mat/0611221.

[18]  S. Coppersmith,et al.  Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells , 2006, cond-mat/0608229.

[19]  A. Zunger,et al.  First-principles combinatorial design of transition temperatures in multicomponent systems: the case of Mn in GaAs. , 2006, Physical review letters.

[20]  Alex Zunger,et al.  Searching for alloy configurations with target physical properties: impurity design via a genetic algorithm inverse band structure approach. , 2006, Physical review letters.

[21]  T. Lu,et al.  Valley splitting of Si Si1-x Gex heterostructures in tilted magnetic fields , 2006, cond-mat/0601637.

[22]  E. Ivchenko,et al.  Spin and valley-orbit splittings in SiGe/Si heterostructures , 2006, cond-mat/0601520.

[23]  D. Paul Si/SiGe heterostructures: from material and physics to devices and circuits , 2004 .

[24]  Giovanni Isella,et al.  Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices , 2004 .

[25]  T. Boykin,et al.  Valley splitting in strained silicon quantum wells , 2003, cond-mat/0309663.

[26]  Shawn G. Thomas,et al.  Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition , 2003 .

[27]  S. Das Sarma,et al.  Exchange in silicon-based quantum computer architecture. , 2001, Physical review letters.

[28]  Alex Zunger,et al.  The inverse band-structure problem of finding an atomic configuration with given electronic properties , 1999, Nature.

[29]  Kang L. Wang,et al.  Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructures , 1999, quant-ph/9905096.

[30]  B. E. Kane A silicon-based nuclear spin quantum computer , 1998, Nature.

[31]  Friedrich Schäffler,et al.  High-mobility Si and Ge structures , 1997 .

[32]  S. Koester,et al.  Determination of spin- and valley-split energy levels in strained Si quantum wells , 1997 .

[33]  D. DiVincenzo,et al.  Quantum computation with quantum dots , 1997, cond-mat/9701055.

[34]  K. Klitzing,et al.  Tilted magnetic field studies of spin- and valley-splittings in Si/Si1 − xGex heterostructures , 1996 .

[35]  Wang,et al.  Local-density-derived semiempirical pseudopotentials. , 1995, Physical review. B, Condensed matter.

[36]  D. Greve Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition , 1993 .

[37]  Jurgen Michel,et al.  Totally relaxed GexSi1−x layers with low threading dislocation densities grown on Si substrates , 1991 .

[38]  Bernard,et al.  Strain energy and stability of Si-Ge compounds, alloys, and superlattices. , 1991, Physical review. B, Condensed matter.

[39]  L. Feldman,et al.  Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices , 1986 .

[40]  K. Klitzing,et al.  An investigation of the valley splitting in n-channel silicon 〈100〉 inversion layers , 1980 .

[41]  J. Verduijn Silicon Quantum Electronics , 2012 .

[42]  Friedrich Schäffler,et al.  High-mobility Si and Ge structures , 1997 .

[43]  Steven G. Louie,et al.  Quantum theory of real materials , 1996 .

[44]  Abstreiter,et al.  Enhanced band-gap luminescence in strain-symmetrized (Si)m/(Ge)n superlattices. , 1993, Physical review. B, Condensed matter.

[45]  Physical Review Letters 63 , 1989 .

[46]  H. Köhler,et al.  Quantitative determination of the valley splitting in n‐type inverted silicon (100) MOSFET surfaces , 1979 .

[47]  Universities of Leeds, Sheffield and York , 2022 .