Europium Diffusion in Ammonothermal Gallium Nitride

[1]  D. Demchenko,et al.  Thermal annealing of GaN implanted with Be , 2022, Journal of Applied Physics.

[2]  M. Boćkowski,et al.  Investigation of beryllium diffusion in HVPE-GaN grown in [11–20] and [10-10] crystallographic directions , 2021, Materials Science in Semiconductor Processing.

[3]  M. Boćkowski,et al.  Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography , 2021, Materials.

[4]  Xionghui Zeng,et al.  Structure and luminescence properties of Eu3+ and Dy3+ implanted GaN films , 2021, Superlattices and Microstructures.

[5]  M. Reshchikov.  Measurement and analysis of photoluminescence in GaN , 2021 .

[6]  A. Uedono,et al.  Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam , 2020, Scientific Reports.

[7]  M. Boćkowski,et al.  Investigation of diffusion mechanism of beryllium in GaN , 2020 .

[8]  K. Hoang.  Tuning the valence and concentration of europium and luminescence centers in GaN through co-doping and defect association , 2020, 2009.04314.

[9]  M. Boćkowski,et al.  High Pressure Processing of Ion Implanted GaN , 2020 .

[10]  M. Boćkowski,et al.  GaN Single Crystalline Substrates by Ammonothermal and HVPE Methods for Electronic Devices , 2020, Electronics.

[11]  Kazunori Sato,et al.  Valence states and the magnetism of Eu ions in Eu-doped GaN , 2020 .

[12]  J. Tatebayashi,et al.  Excitation Efficiency and Limitations of the Luminescence of Eu3+ Ions in GaN , 2019, Physical Review Applied.

[13]  Morten Mattrup Smedskjær,et al.  Luminescence behaviour of Eu3+ in hot-compressed silicate glasses , 2019, Journal of Non-Crystalline Solids: X.

[14]  M. Boćkowski.  Highly effective activation of Mg-implanted p-type GaN by ultra-high-pressure annealing , 2019, Applied Physics Letters.

[15]  M. Boćkowski,et al.  Homoepitaxial growth by halide vapor phase epitaxy of semi-polar GaN on ammonothermal seeds , 2019, Japanese Journal of Applied Physics.

[16]  B. Kukliński,et al.  Enhancement of the Eu3+ luminescence in Li2B4O7 glasses co-doped with Eu and Ag , 2018, Journal of Luminescence.

[17]  M. Boćkowski,et al.  Basic ammonothermal growth of Gallium Nitride – State of the art, challenges, perspectives , 2018, Progress in Crystal Growth and Characterization of Materials.

[18]  M. Boćkowski,et al.  Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the 5D1 level , 2017 .

[19]  M. Boćkowski,et al.  Ammonothermal growth of GaN crystals on HVPE-GaN seeds prepared with the use of ammonothermal substrates , 2015 .

[20]  F. Tuomisto,et al.  Vacancy-hydrogen complexes in ammonothermal GaN , 2014 .

[21]  D. Demchenko,et al.  Green luminescence in Mg-doped GaN , 2014 .

[22]  A. Koizumi,et al.  The role of donor-acceptor pairs in the excitation of Eu-ions in GaN:Eu epitaxial layers , 2014 .

[23]  Y. Fujiwara,et al.  Eu luminescence center created by Mg codoping in Eu-doped GaN , 2012 .

[24]  K. P. O'Donnell,et al.  High pressure annealing of Europium implanted GaN , 2012, OPTO.

[25]  D. Nečas,et al.  Gwyddion: an open-source software for SPM data analysis , 2012 .

[26]  K. Wang,et al.  The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN , 2011 .

[27]  T. Paskova,et al.  Growth of Bulk GaN Crystals , 2011 .

[28]  J. Weyher,et al.  Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits , 2009 .

[29]  J. Ziegler,et al.  SRIM – The stopping and range of ions in matter (2010) , 2010 .

[30]  L. Kassab,et al.  Eu3+ luminescence in tellurite glasses with gold nanostructures , 2008 .

[31]  O. Oda,et al.  Optical transitions in Eu3+ ions in GaN: Eu grown by molecular beam epitaxy , 2006 .

[32]  A. Steckl,et al.  Spectral and time-resolved photoluminescence studies of Eu-doped GaN , 2003 .

[33]  K. Ebeling,et al.  Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing , 1998 .

[34]  K. Ebeling,et al.  Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N 2 overpressure , 1997 .

[35]  Kovalev,et al.  Free exciton emission in GaN. , 1996, Physical review. B, Condensed matter.

[36]  John C. Slater,et al.  Atomic Radii in Crystals , 1964 .