Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication

Atomic force microscope induced local oxidation of silicon is a process with a strong potential for use in proximal probe nanofabrication. Here we examine its kinetics and mechanism and how such factors as the strength of the electric field, ambient humidity, and thickness of the oxide affect its rate and resolution. Detection of electrochemical currents proves the anodization character of the process. Initial very fast oxidation rates are shown to slow down dramatically as a result of a self-limiting behavior resulting from the build up of stress and a reduction of the electric field strength. The lateral resolution is determined by the defocusing of the electric field in a condensed water film whose extent is a function of ambient humidity.

[1]  L. Ley,et al.  Nanometer‐scale field‐induced oxidation of Si(111):H by a conducting‐probe scanning force microscope: Doping dependence and kinetics , 1995 .

[2]  E. S. Snow,et al.  AFM Fabrication of Sub-10-Nanometer Metal-Oxide Devices with in Situ Control of Electrical Properties , 1995, Science.

[3]  David R. Allee,et al.  Selective area oxidation of silicon with a scanning force microscope , 1993 .

[4]  T. Hattori,et al.  Modification of Silicon Surface Using Atomic Force Microscope with Conducting Probe , 1993 .

[5]  M. Hoshi,et al.  Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode , 1995 .

[6]  T. Hattori,et al.  Fabrication of nanometer‐scale structures using atomic force microscope with conducting probe , 1994 .

[7]  Krishna C. Saraswat,et al.  Two-dimensional thermal oxidation of silicon. II. Modeling stress effects in wet oxides , 1988 .

[8]  H. Sugimura,et al.  Scanning Tunneling Microscope Tip-Induced Anodization for Nanofabrication of Titanium , 1994 .

[9]  A. E. Gordon,et al.  Mechanisms of surface anodization produced by scanning probe microscopes , 1995 .

[10]  James D. Plummer,et al.  Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results , 1985 .

[11]  Michael T. Postek,et al.  Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in air , 1990 .

[12]  E. Snow,et al.  Fabrication of Si nanostructures with an atomic force microscope , 1994 .

[13]  Hyongsok T. Soh,et al.  Fabrication of 0.1 um metal oxide semiconductor field-effect transistors with the atomic force microscope , 1995 .

[14]  N. Cabrera,et al.  Theory of the oxidation of metals , 1949 .