Contamination of Si surfaces in ultrahigh vacuum and formation of SiC islands

[1]  P. Blanckenhagen,et al.  Observation of harmonic current oscillations on partially oxidized Si(111) surfaces by scanning tunneling microscopy , 1999 .

[2]  C. Bittencourt.  Formation of a SiC buffer layer by reaction of Si (100) with methane and hydrogen plasma , 1999 .

[3]  Plummer,et al.  Defect-mediated condensation of a charge density wave , 1999, Science.

[4]  A. Melechko,et al.  Two-Dimensional Phase Transition Mediated by Extrinsic Defects , 1999 .

[5]  M. Casalboni,et al.  Si1−xCx formation by reaction of Si(111) with acetylene: growth mode, electronic structure and luminescence investigation , 1999 .

[6]  Zhangda Lin,et al.  Reaction Processes At The Initial Stage of Diamond Nucleation on The Surface of Si(111) , 1998 .

[7]  E. Suh,et al.  GROWTH MECHANISM OF 3C-SIC(111) FILMS ON SI USING TETRAMETHYLSILANE BY RAPID THERMAL CHEMICAL VAPOR DEPOSITION , 1997 .

[8]  Richard Martel,et al.  Molecularly Adsorbed Oxygen Species on Si(111)-(7×7): STM-Induced Dissociative Attachment Studies , 1996, Science.

[9]  Andrew J. Steckl,et al.  Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization , 1995 .

[10]  Sakurai,et al.  STM study on the interactions of C70 with the Si(100)2 x 1 surface. , 1994, Physical review. B, Condensed matter.

[11]  Shin–ichiro Tanaka,et al.  Elementary Chemical-Reaction Processes on Silicon Surfaces*1 , 1993 .

[12]  S. Desu,et al.  Conversion of single crystal Si(100) to SiC film by C_2H_2 , 1993 .

[13]  A. Steckl,et al.  Atomic probe imaging of β‐SiC thin films grown on (100) Si , 1992 .

[14]  R. Davis,et al.  Studies of β‐SiC (001) and (111) surfaces by scanning tunneling microscopy , 1991 .

[15]  P. Avouris,et al.  Atom‐resolved surface chemistry: The early steps of Si(111)‐7×7 oxidation , 1991 .

[16]  R. Davis,et al.  Scanning tunneling microscopy of cubic silicon carbide surfaces , 1988 .

[17]  H. Matsunami,et al.  Epitaxial growth and electric characteristics of cubic SiC on silicon , 1987 .

[18]  R. Davis,et al.  Epitaxial Growth and Characterization of β ‐ SiC Thin Films , 1985 .

[19]  Herbert A. Will,et al.  Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices , 1983 .

[20]  E. Suh,et al.  Effects of Experimental Parameters on Void Formation in the Growth of 3C‐SiC Thin Film on Si Substrate , 1998 .

[21]  Volker Cimalla,et al.  Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing , 1995 .

[22]  A. J. Steckl,et al.  Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/ , 1992 .