Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer

In this paper, we investigated the electrical characteristics of RRAM with TiN/BNNF/HfO2/TiN crossbar structure. The hexagonal boron nitride nanofilm (BNNF) was transferred to the interface between the TiN top electrode and the HfO2 switching layer to form a BNNF/HfO2 bilayer structure. Transmission electron microscopy spectra confirms the BNNF exists between TiN and HfO2 layers. The TiN/BNNF/HfO2/TiN structure was observed to have several great performance as great uniformity and endurance by inserting an excellent property of the BNNF. The nonlinear current behavior in LRS current of the TiN/BNNF/HfO2/TiN crossbar structure can be attributed to the BNNF influence the current conduction mechanism owing to forming a high barrier height on TiN/HfO2 interface.

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