论文信息 - MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content - 字舞流文

MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content

A. Yamamoto | K. Sugita | A. Hashimoto | A. G. Bhuiyan | Mikiyasu Tanaka | K. Sasamoto

[1] Md. Rafiqul Islam,et al. Recent advances in InN‐based solar cells: status and challenges in InGaN and InAlN solar cells , 2010 .

[2] H. Morkoç,et al. InAlN‐barrier HFETs with GaN and InGaN channels , 2009 .

[3] A. Yamamoto,et al. MOVPE growth and Mg doping of InxGa1−xN (x∼0.4) for solar cell , 2009 .

[4] A. Yamamoto,et al. A porous layer: an evidence for the deterioration of MOVPE InN grown at high temperature (∼650 °C) , 2009 .

[5] A. Yamamoto,et al. Atmospheric‐pressure MOVPE growth of In‐rich InAlN , 2008 .

[6] R. Jones,et al. Electron mobility in InN and III-N alloys , 2007 .

[7] Jürgen Christen,et al. Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range , 2007 .

[8] Xiu-yu Li,et al. Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition , 2006 .

[9] M. Koh,et al. Synthesis and structural properties of Al-C-N-O composite thin films , 2001 .

[10] Masaaki Kuzuhara,et al. Theoretical simulation of DC and RF performance for AlInN/InGaN/AlInN double-heterojunction FET using a Monte Carlo approach , 2008, IEICE Electron. Express.