论文信息 - Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition

Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition

P-type GaN layers were grown on sapphire by metalorganic chemical-vapor deposition and then rapid thermal annealing (RTA) was performed to electrically activate Mg impurities. Varied acceptor densities were obtained by RTA temperature and Mg concentration. Temperature-dependent Hall effects show that the thermal activation energy of the acceptor (EA) is strongly dependent on the acceptor density (NA), approximated by EA(0)=372−1.16×10−18 NA meV at 0 K. A strong temperature dependence of EA was also obtained in this study.

[1] Michael Kunzer,et al. Nature of the 2.8 eV photoluminescence band in Mg doped GaN , 1998 .

[2] Takashi Mukai,et al. Hole Compensation Mechanism of P-Type GaN Films , 1992 .

[3] Lester F. Eastman,et al. Scattering of electrons at threading dislocations in GaN , 1998 .

[4] S. G. Bishop,et al. Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy , 1996 .

[5] Activation of Acceptors in Mg-Doped, p-Type GaN , 1996 .

[6] S. Sakai,et al. Investigation on the P-Type Activation Mechanism in Mg-doped GaN Films Grown by Metalorganic Chemical Vapor Deposition , 1999 .

[7] D. C. Reynolds,et al. Defect Donor and Acceptor in GaN , 1997 .

[8] D. Look,et al. Hole Transport in Pure and Doped GaAs , 1983 .

[9] M. G. Cheong,et al. Hole transport in Mg-doped GaN epilayers grown by metalorganic chemical vapor deposition , 2000 .

[10] S. Denbaars,et al. Heavy doping effects in Mg-doped GaN , 2000 .

[11] C. R. Crowell,et al. Contact size effects on the van der Pauw method for resistivity and Hall coefficient measurement , 1974 .

[12] Isamu Akasaki,et al. Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting Devices , 1994 .