Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters

A discussion is presented of the effects of the finite op-amp gain bandwidth (GB) and the MOS intrinsic and extrinsic parasitic capacitances on the performance of a recently reported class of MOSFET-C continuous-time integrated filters. This class of filters is designed directly in the MOS domain, without having to develop an intermediate active-RC prototype. It is shown that the structures are insensitive to intrinsic parasitic capacitances. Ways to compensate for the GB effects are proposed.<<ETX>>

[1]  Yannis Tsividis,et al.  Continuous-time MOSFET-C filters in VLSI , 1986 .

[2]  Nobuo Fujii,et al.  A novel MOSFET-C filter realization method using a canonical number of capacitors , 1991, 1991., IEEE International Sympoisum on Circuits and Systems.

[3]  Mohammed Ismail,et al.  A new MOSFET-C universal filter structure for VLSI , 1987, 1987 Symposium on VLSI Circuits.

[4]  Mohammed Ismail,et al.  A novel technique for designing continuous-time filters in MOS technology , 1988, 1988., IEEE International Symposium on Circuits and Systems.