Hot-electron degradation of n-channel polysilicon MOSFETs

The stability of the hydrogen passivation in hydrogenated n-channel polysilicon MOSFETs has been studied under thermal stress and hot-electron stress at elevated temperatures. Although the hydrogen passivation is stable at 150 degrees C, channel hot-electron stress at high temperatures appears to create additional grain boundary traps, presumably by breaking the Si-H bonds at the grain boundaries. This mechanism is in addition to the creation of acceptor-type fast interface states that occur in bulk MOSFETs. >

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