A 122-GHz SiGe-Based Signal-Generation Chip Employing a Fundamental-Wave Oscillator With Capacitive Feedback Frequency-Enhancement

This paper presents a highly integrated and fully balanced signal generation block comprising a fundamental-wave voltage-controlled oscillator (VCO), an output buffer, and a configurable frequency divider stage (prescaler). The VCO introduces a negative resistance structure in conjunction with capacitive cross-coupling. This compound structure allows fundamental oscillation to be sustained at high frequencies while providing wide tuning ranges. The capabilities of the capacitive feedback were analyzed using a linear transistor model, and boundary conditions, which support the early design phase, were derived. The chip was fabricated in a SiGe technology with 300-GHz fmax HBTs. The output frequency of the monolithic microwave integrated circuit is centered at 122 GHz and provides a tuning range of 16 GHz at an average single-sideband phase noise of -95 dBc/Hz at 1 MHz offset frequency. Possible applications include ISM applications at 122 GHz and short-range radar systems with wide tuning ranges.

[1]  Y. Baeyens,et al.  A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output , 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

[2]  H. Veenstra,et al.  Opportunities at mm-Wave frequencies: SiGe or CMOS? , 2008, 2008 European Microwave Integrated Circuit Conference.

[3]  J. Bock,et al.  Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors , 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

[4]  S.P. Voinigescu,et al.  165-GHz Transceiver in SiGe Technology , 2008, IEEE Journal of Solid-State Circuits.

[5]  Christoph Scheytt,et al.  A Subharmonic Receiver in SiGe Technology for 122$~$GHz Sensor Applications , 2010, IEEE Journal of Solid-State Circuits.

[6]  Suematsu Noriharu,et al.  A Double Tuned Ku-Band SiGe-MMIC VCO with Variable Feed-Back Capacitor , 2006 .

[7]  W. Simburger,et al.  Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology , 2004, IEEE Journal of Solid-State Circuits.

[8]  Yan Zhao,et al.  A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160GHz , 2010, 2010 IEEE International Solid-State Circuits Conference - (ISSCC).

[9]  R. H. Derksen,et al.  7.3-GHz dynamic frequency dividers monolithically integrated in a standard bipolar technology , 1988 .

[10]  A. Lisauskas,et al.  Opportunities for silicon at mmWave and Terahertz frequencies , 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[11]  P. Heymann,et al.  On the load-pull effect in MMIC oscillator measurements , 2003, 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).

[12]  G.A.M. Hurkx,et al.  RF figures-of-merit for process optimization , 2004, IEEE Transactions on Electron Devices.

[13]  J. Bock,et al.  SiGe bipolar technology for automotive radar applications , 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

[14]  Igor M. Filanovsky,et al.  Sensitivity and Selectivity , 2001, Passive, Active, and Digital Filters.

[15]  Tsutomu Tashiro,et al.  A Si bipolar 28-GHz dynamic frequency divider , 1992 .

[16]  Calvin Plett,et al.  Integrated Circuit Design for High-Speed Frequency Synthesis , 2006 .

[17]  Andrei Grebennikov.  RF and Microwave Transistor Oscillator Design , 2007 .

[18]  Kevin T. Kornegay,et al.  Analysis and design of negative impedance LC oscillators using bipolar transistors , 2003 .

[19]  A. Stelzer,et al.  Highly integrated 79, 94, and 120-GHz SiGe radar frontends , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[20]  I. Sarkas,et al.  Second generation transceivers for d-band radar and data communication applications , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[21]  A. Stelzer,et al.  PLL Architecture for 77-GHz FMCW Radar Systems with Highly-Linear Ultra-Wideband Frequency Sweeps , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[22]  Rudolf Lachner,et al.  168 GHz dynamic frequency divider in SiGe:C bipolar technology , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[23]  K. Aufinger,et al.  SiGe Bipolar VCO With Ultra-Wide Tuning Range at 80 GHz Center Frequency , 2009, IEEE Journal of Solid-State Circuits.

[24]  W. Simburger,et al.  A Fundamental VCO with Integrated Output Buffer beyond 120 GHz in SiGe Bipolar Technology , 2007, 2007 IEEE/MTT-S International Microwave Symposium.

[25]  Yue Tan,et al.  A power-optimized widely-tunable 5-GHz monolithic VCO in a digital SOI CMOS technology on high resistivity substrate , 2003, ISLPED '03.

[26]  P. Chevalier,et al.  Advanced process modules and architectures for half-terahertz SiGe:C HBTs , 2009, 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

[27]  Josef Hausner,et al.  Investigation and reduction of frequency pulling in SiGe mm-wave VCOs at limited power consumption , 2010, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).

[28]  Alexander Rylyakov,et al.  A 136-GHz Dynamic Divider in SiGe Technology , 2009, 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[29]  Hans-Martin Rein,et al.  Millimeter-wave VCOs with wide tuning range and low phase noise, fully integrated in a SiGe bipolar production technology , 2003, IEEE J. Solid State Circuits.