论文信息 - Low-noise automated measurement system for low-frequency current fluctuations in thin-oxide silicon structures

Low-noise automated measurement system for low-frequency current fluctuations in thin-oxide silicon structures

A description is given of the design of an automated system for low-noise measurement of low-frequency current fluctuations in thin-oxide silicon devices. The aim of these measurements is to study the current tunneling through the oxide, and to investigate its correlation with the oxide breakdown. The dedicated system is realized by integrating a personal computer commercial acquisition board with custom high-sensibility low-noise preamplifiers.<<ETX>>

Roberto Saletti | Bruno Neri | B. Neri | R. Saletti | R. Saletti

[1] Piero Olivo,et al. Low‐frequency noise in silicon‐gate metal‐oxide‐silicon capacitors before oxide breakdown , 1987 .

[2] Massimo V. Fischetti,et al. SiO2‐induced substrate current and its relation to positive charge in field‐effect transistors , 1986 .

[3] Roberto Saletti,et al. Correlated fluctuations and noise spectra of tunneling and substrate currents before breakdown in thin-oxide MOS devices , 1990 .

[4] A. A. Abidi. Automated system for the measurement of fluctuation phenomena in FETs , 1988 .

[5] Roberto Saletti,et al. Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodes , 1988 .