Laser ablation of polymers using 395 nm and 790 nm femtosecond lasers

We compared a Ti:sapphire fs laser (790 nm) with a second harmonics (395 nm) fs laser, and then mixed them for ablating polyethylene (PE). Compared to the 790 nm fs laser, the 395 nm fs laser harmonics could etch PE faster. However, isolated carbon was formed on the ablated surface, in addition to C=O and C=C-H bonds. When we mixed a faint beam of the 395 nm fs laser harmonics with the 790 nm fs laser, the etching depth became even deeper. Moreover, the chemical composition of the ablated surface remained unchanged. At a total laser fluence of 80 mJ/cm2, the most suitable laser fluences for the 395 nm fs laser harmonics and the 790 nm fs laser were found to be approximately 2 and 78 mJ/cm2 respectively.