Selective Implantation Patterning and MBE Regrowth for Integration of Mm-Wave Application Heterojunction Devices

A technology based on a combination of selective implantation for lateral patterning and a following large area regrowth by molecular beam epitaxy (MBE) is introduced. The technology allows the monolithic integration of devices with different vertical layer sequences on s.i. GaAs substrates in a quasi planar way, e.g. a heterojunction field-effect-transistor (HFET) with a Schottky diode or a MESFET with a Schottky diode. Selective high resistive (>10 9 Ω/sq) and highly conducting ( 12 cm −2 (1.6×10 12 cm −2 ) and Hall mobilities of 6150 cm 2 /Vs (17700 cm 2 /Vs) at 300 K (80 K) in the dark are achieved. The material quality is drastically improved by substrate preparation and in-situ cleaning prior to MBE regrowth.