Morphological changes of nanostructures on silicon induced by C60-ion irradiation

We study morphological changes on the Si surface induced by the C60 ion beam under various irradiation conditions. The fluence and incident energy of the C60 ion beam was 1 × 1016–1 × 1019 ions/m2 and 50 keV–9 MeV, respectively. The beam’s incident angle to the surface normal was 0° or 60°. As a result of the changes in these variables, three types of nanostructures were observed: concave and convex, stringlike, and ripple structures. Structure shapes or sizes varied with changes in the parameters. Almost all cases showed concave and convex structures at an incident angle of 0°. At a 60° incident angle, stringlike or ripple structures were formed. Stringlike structures were formed at higher incident energy, while ripple structures were formed at lower incident energy. We found that both stringlike and ripple structures can form from sputtering and thermal effects. The formation of string structure requires a thicker amorphous layer and the proper balance of sputtering and annealing.

[1]  Vandana,et al.  Energy-dependent surface nanopatterning of Si (100) for different projectiles: a tunable anisotropic wettability of ripple surface , 2021, Applied Nanoscience.

[2]  V. Pelenovich,et al.  Design and application of gas cluster accelerator for surface smoothing and nanostructures formation , 2020 .

[3]  Y. Saitoh,et al.  Novel Approaches for Intensifying Negative C60 Ion Beams Using Conventional Ion Sources Installed on a Tandem Accelerator , 2020, Quantum Beam Science.

[4]  N. Nitta,et al.  Fibrous structure in GaSb surfaces irradiated with fast Cu cluster ions , 2018 .

[5]  Erik Bitzek,et al.  Atomistic simulations of focused ion beam machining of strained silicon , 2017 .

[6]  E. Iacob,et al.  Nanofabrication of self-organized periodic ripples by ion beam sputtering , 2016 .

[7]  H. Hofsäss,et al.  Argon ion beam induced surface pattern formation on Si , 2016 .

[8]  H. Hofsäss.  Surface instability and pattern formation by ion-induced erosion and mass redistribution , 2014 .

[9]  P. Karmakar,et al.  The role of carbon in ion beam nano-patterning of silicon , 2013 .

[10]  Q. Ramasse,et al.  Ion implantation of graphene-toward IC compatible technologies. , 2013, Nano letters.

[11]  P. Shipman,et al.  A surface layer of altered composition can play a key role in nanoscale pattern formation induced by ion bombardment , 2012 .

[12]  C. Spinella,et al.  Nanostructuring in Ge by self-ion implantation , 2010 .

[13]  Wayne Hung,et al.  A review of focused ion beam sputtering , 2010 .

[14]  T. Seki,et al.  Molecular dynamics simulations for gas cluster ion beam processes , 2010 .

[15]  T. Seki,et al.  Study of density effect of large gas cluster impact by molecular dynamics simulations , 2009 .

[16]  S. Ninomiya,et al.  MD simulation study of the sputtering process by high-energy gas cluster impact , 2008 .

[17]  F. Frost,et al.  Ripple rotation, pattern transitions, and long range ordered dots on silicon by ion beam erosion , 2008 .

[18]  Ampere A Tseng,et al.  Recent developments in nanofabrication using focused ion beams. , 2005, Small.

[19]  Lourdes Pelaz,et al.  Ion-beam-induced amorphization and recrystallization in silicon , 2004 .

[20]  A. Petford-Long,et al.  Preparation of transmission electron microscopy cross-section specimens using focused ion beam milling , 2001 .

[21]  Michael J. Aziz,et al.  Ion-beam sculpting at nanometre length scales , 2001, Nature.

[22]  Shinji Matsui,et al.  Three-dimensional nanostructure fabrication by focused-Ion-beam chemical vapor deposition , 2000, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).

[23]  H. Hobert,et al.  Damage production in semiconductor materials by a focused Ga + ion beam , 2000 .

[24]  S. Kucheyev,et al.  Ion-beam-induced porosity of GaN , 2000 .

[25]  A. Barabasi,et al.  Quantum Dot and Hole Formation in Sputter Erosion , 2000, cond-mat/0008111.

[26]  J. Poate,et al.  Evolution from point to extended defects in ion implanted silicon , 1997 .

[27]  John C. Zolper,et al.  Ion implantation doping and isolation of GaN , 1995 .

[28]  S. J. Pennycook,et al.  New model for damage accumulation in Si during self‐ion irradiation , 1989 .

[29]  R. M. Bradley,et al.  Theory of ripple topography induced by ion bombardment , 1988 .

[30]  S. Norris,et al.  Simulation of redistributive and erosive effects in a-Si under Ar+ irradiation , 2018 .