Hydrostatic Pressure Studies on Parent Phase SrFBiS2 of BiS2-based Superconducting Family

In the present work, we measure the temperature dependent electrical resistivity from 300K down to 2K under applied hydrostatic pressure of upto 2.5GPa for SrFBiS2, which is the parent compound for the BiS2 based superconductors. Though the normal state resistivity of the compound decreases with pressure, the same is not superconducting down to 2K under applied pressure of up to 2.5Gpa.

[1]  R. Jha,et al.  Significant enhancement of superconductivity under Hydrostatic pressure in CeO0.5F0.5BiS2 superconductor , 2014, 1405.5976.

[2]  R. Jha,et al.  Impact of Hydrostatic Pressure on Superconductivity of Sr0.5La0.5FBiS2 , 2014, 1402.0994.

[3]  S. Demura,et al.  Pressure-Induced Enhancement of Superconductivity and Structural Transition in BiS 2 -Layered LaO 1- x F x BiS 2 , 2013, 1309.4250.

[4]  M. Maple,et al.  Enhancement of superconductivity near the pressure-induced semiconductor–metal transition in the BiS2-based superconductors LnO0.5F0.5BiS2 (Ln = La, Ce, Pr, Nd) , 2013, Journal of physics. Condensed matter : an Institute of Physics journal.

[5]  M. Maple,et al.  Pressure-induced enhancement of superconductivity and suppression of semiconducting behavior in L n O 0.5 F 0.5 BiS 2 ( L n = La ,Ce) compounds , 2013, 1307.4157.

[6]  Xiaofeng Xu,et al.  Superconductivity induced by La doping in Sr 1-x La x FBiS 2 , 2013, 1301.2380.

[7]  Kefeng Wang,et al.  New layered fluorosulfide SrFBiS2. , 2012, Inorganic chemistry.

[8]  Shruti,et al.  Appearance of superconductivity in layered LaO0.5F0.5BiS2 , 2012, 1207.6845.

[9]  Anuj Kumar,et al.  Synthesis and Superconductivity of New BiS2 Based Superconductor PrO0.5F0.5BiS2 , 2012, 1208.5873.

[10]  Anuj Kumar,et al.  Superconductivity at 5K in NdO0.5F0.5BiS2 , 2012, 1208.3077.

[11]  Shruti,et al.  Bulk superconductivity in bismuth oxysulfide Bi4O4S3. , 2012, Journal of the American Chemical Society.

[12]  S. Demura,et al.  Superconductivity in novel BiS2-based layered superconductor LaO1-xFxBiS2 , 2012, 1207.3558.