Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

This work was supported by the State Key Program for Basic Research of China under Grant Nos. 2010CB327504, 2011CB922100, 2011CB301900; the National Natural Science Foundation of China under Grant Nos. 60825401, 60936004, 11104130, BK2011556, and BK2011050.

[1]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[2]  A. Janotti,et al.  Oxygen vacancies in ZnO , 2005 .

[3]  H. Ohta,et al.  Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4 , 2005 .

[4]  T. Kamiya,et al.  High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering , 2006 .

[5]  G. Fortunato,et al.  Aging effects in pentacene thin-film transistors: Analysis of the density of states modification , 2006 .

[6]  Yeon-Gon Mo,et al.  High mobility bottom gate InGaZnO thin film transistors with SiOx etch stopper , 2007 .

[7]  Cherie R. Kagan,et al.  Thin-Film Transistors , 2007 .

[8]  Mingxiang Wang,et al.  Stress Power Dependent Self-Heating Degradation of Metal-Induced Laterally Crystallized n-Type Polycrystalline Silicon Thin-Film Transistors , 2007, IEEE Transactions on Electron Devices.

[9]  Hideo Hosono,et al.  Subgap states in transparent amorphous oxide semiconductor, In–Ga–Zn–O, observed by bulk sensitive x-ray photoelectron spectroscopy , 2008 .

[10]  John F. Muth,et al.  Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors , 2008 .

[11]  Jong-Ho Lee,et al.  Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics , 2009 .

[12]  Jin-seong Park,et al.  The influence of the gate dielectrics on threshold voltage instability in amorphous indium-gallium-zinc oxide thin film transistors , 2009 .

[13]  Hideo Hosono,et al.  Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors , 2009 .

[14]  T. Kamiya,et al.  Electronic structure of the amorphous oxide semiconductor a‐InGaZnO4–x : Tauc–Lorentz optical model and origins of subgap states , 2009 .

[15]  Sung-Min Yoon,et al.  Photon-accelerated negative bias instability involving subgap states creation in amorphous In–Ga–Zn–O thin film transistor , 2010 .

[16]  B. Ryu,et al.  O-vacancy as the origin of negative bias illumination stress instability in amorphous In-Ga-Zn-O thin film transistors , 2010, 1006.4913.

[17]  Shin-Ping Huang,et al.  Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors , 2010 .

[18]  D. Choi,et al.  Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films , 2010 .

[19]  Po-Lun Chen,et al.  Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress , 2010 .

[20]  S. Im,et al.  Density of trap states measured by photon probe into ZnO based thin-film transistors , 2010 .

[21]  U-In Chung,et al.  Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors , 2011 .

[22]  Sang Yeol Lee,et al.  Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress , 2011 .