论文信息 - Intrinsic defects in neutron-irradiated silicon an infrared study

Intrinsic defects in neutron-irradiated silicon an infrared study

2014 We show that the low temperature observation of the near IR absorption bands at 3.3-3.6 03BCm in irradiated silicon can be monitored by illumination of the sample by infrared radiation of selected energies. This behaviour is ascribed to the capture of a photoelectron or to its photorelease by the defect involved, and we discuss its IR active charge state. We also report the observation of new IR absorption lines prior to annealing, due to intrinsic defects whose nature is briefly discussed in relation to the annealing results. LE JOURNAL DE PHYSIQUE LETTRES ~ TOME 39, 15 AVRIL 1978,

B. Pajot | P. Vajda | F. Carton-Merlet

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