Preparation of organic semiconductive thin films by laser ablation: Control of structure and electric properties by selecting wavelength, fluence, and substrate temperature

Amorphous organic semiconductive thin films with electric conductivities ranging between 10−5 and 101 Scm−1 are prepared on several temperature-controlled substrates by excimer laser ablation (ELA) of 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA) with 193 nm (ArF), 248 nm (KrF) and 308 nm (XeCl) beams. The structure, electric conductivity, and carrier species of the prepared films depend strongly on the ablation wavelength, fluence, and substrate temperature. Thermoelectromotive force measurements demonstrate conversion of carrier species from n-type to p-type with increasing fluence of a 308-nm beam from 0.2 to 4.0 Jcm−2pulse−1. A film prepared on a substrate at 300 °C by ELA with a 308-nm beam partially contains a polyperinaphthalene (PPN) structure with electric conductivity of 10−2 to 10−1 Scm−1. © 1998 Scripta Technica, Electr Eng Jpn, 125(2): 19–26, 1998

[1]  K. Yoshino,et al.  Electrical conductivity and thermoelectric power in polyacenic materials , 1987 .

[2]  M. Yudasaka,et al.  Polyperinaphthalene film formation by pulsed laser deposition with a target of perylenetetracarboxylic dianhydride , 1994 .

[3]  S. R. Forrest,et al.  Organic‐on‐inorganic semiconductor contact barrier devices , 1982 .

[4]  R. Srinivasan,et al.  Ablative photodecomposition: action of far-ultraviolet (193 nm) laser radiation on poly(ethylene terephthalate) films , 1982 .

[5]  S. Namba,et al.  Effective deep ultraviolet photoetching of polymethyl methacrylate by an excimer laser , 1982 .

[6]  T. Venkatesan,et al.  Preparation of Y‐Ba‐Cu oxide superconductor thin films using pulsed laser evaporation from high Tc bulk material , 1987 .

[7]  Akira Yabe,et al.  Chemical surface modification of fluorocarbon polymers by excimer laser processing , 1996 .

[8]  S. Shah,et al.  Laser Ablation and the Production of Polymer Films , 1993, Science.

[9]  S. Nishio,et al.  Control of structures of deposited polymer films by ablation laser wavelength: Polyacrylonitrile at 308, 248, and 193 nm , 1996 .

[10]  F. Kannari,et al.  Electrical and optical characteristics of organic thin films fabricated by laser ablation , 1996 .

[11]  T. Yamabe,et al.  Preparation of polyacenic semiconductive thin films by excimer laser ablation , 1996 .

[12]  A. Yabe,et al.  Wavelength Dependence on the Formation of Electrically Conductive Fine Particles by Excimer Laser-Induced Ablative Photodecomposition of Monomeric Polynuclear Aromatic Solids , 1992 .

[13]  S. Iijima,et al.  Morphology and structure of a one‐dimensional graphite polymer, poly‐peri‐naphthalene , 1986 .

[14]  S. Nishio,et al.  Multiphoton Ionization-Mass Spectrometric Study on Laser Ablation of Polymethylmethacrylate and Polystyrene at 308 nm , 1995 .