Gas phase contribution to carbon incorporation and extraction mechanisms for LEC GaAs
暂无分享,去创建一个
[1] J. Nishio,et al. Influence of melt preparation on residual impurity concentration in semi-insulating LEC GaAs , 1989 .
[2] J. Nishio,et al. Precise melt composition control for LEC GaAs , 1987 .
[3] J. Nishio,et al. Magnetic field effect on residual impurity concentrations for LEC GaAs crystal growth , 1987 .
[4] J. Osaka,et al. Quantitative analysis of carbon in liquid‐encapsulated Czochralski GaAs , 1985 .
[5] P. Asbeck,et al. Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates , 1984 .
[6] J. Baukus,et al. Carbon in semi‐insulating, liquid encapsulated Czochralski GaAs , 1984 .
[7] A. Rohatgi,et al. Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs , 1982 .
[8] T. Fukuda,et al. LEC Growth Technique for Homogeneous Undoped Semi-Insulating GaAs Single Crystals with in-situ Melt Purification Process , 1982 .
[9] C. Kirkpatrick,et al. Stoichiometry‐controlled compensation in liquid encapsulated Czochralski GaAs , 1982 .
[10] D. Volman,et al. Flame Ionization Detection of Carbon Monoxide for Gas Chromatographic Analysis. , 1962 .