Solid-state reaction of iron on β-SiC

The solid‐state reaction between Fe and β‐SiC has been studied using Auger‐electron and electron‐energy‐loss spectroscopies and ion sputter profiling. Fe films from submonolayer coverage to 1000 A thickness were grown in ultrahigh vacuum, and annealed at temperatures up to 550 °C. Auger line‐shape changes occurred even for initial Fe coverage at 190 °C, indicating substantial bond alteration in the SiC substrate. A 1000‐A film was largely consumed by reaction with Si and C diffused from the substrate during a 500 °C anneal, and exhibited both Fe silicide and carbide throughout most of its original volume and free C present as graphite primarily at the surface. As an aid in identifying the reaction products studied in this work, Auger line shapes were first determined for the SiLVV peak in Fe silicide and for the CKLL transition in Fe carbide.

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