Investigation of electrical and optical properties in semiconductor structures via SEM techniques with high spatial resolution

[1]  E. Yakimov,et al.  Study of the effect of irradiation with the SEM electron beam on cathodoluminescence and the induced current in InGaN/GaN structures with multiple quantum wells , 2011 .

[2]  R. Martin,et al.  Cathodoluminescence nano-characterization of semiconductors , 2011 .

[3]  E. Yakimov,et al.  Cathodoluminescence study of individual ZnO nanorods , 2011 .

[4]  E. Yakimov,et al.  Effect of low energy electron irradiation on optical properties of InGaN/GaN light emitting structures , 2011 .

[5]  Tao Wang,et al.  High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures , 2011, 1102.1835.

[6]  E. Yakimov,et al.  EBIC investigation of InGaN/GaN multiple quantum well structures irradiated with low energy electrons , 2011 .

[7]  E. Yakimov,et al.  Effect of low-energy electron irradiation on the cathodoluminescence of multiple quantum well (MQW) InGaN/GaN structures , 2011 .

[8]  E. Yakimov.  Comment on “Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence” [Appl. Phys. Lett. 89, 161905 (2006)] , 2010 .

[9]  T. Sekiguchi,et al.  Low-energy cathodoluminescence microscopy for the characterization of nanostructures , 2010, Science and technology of advanced materials.

[10]  E. Yakimov.  Profile of EBIC dislocation contrast in semiconductors with small diffusion length , 2009 .

[11]  N. B. Smirnov,et al.  EBIC and CL studies of ELOG GaN films , 2009 .

[12]  E. Yakimov,et al.  Study of dislocation EBIC image width in GaN films and GaN based structures , 2009 .

[13]  N. B. Smirnov,et al.  Effects of laterally overgrown n-GaN thickness on defect and deep level concentrations , 2008 .

[14]  N. B. Smirnov,et al.  Donor nonuniformity in undoped and Si doped n-GaN prepared by epitaxial lateral overgrowth , 2008 .

[15]  E. Yakimov,et al.  Defects with bright contrast in the induced-current mode in GaN-based light-emitting structures , 2007 .

[16]  N. B. Smirnov,et al.  Spatial variations of doping and lifetime in epitaxial laterally overgrown GaN , 2007 .

[17]  Dominique Drouin,et al.  Carrier recombination near threading dislocations in GaN epilayers by low voltage cathodoluminescence , 2006 .

[18]  M. Phillips.  Cathodoluminescence Microscopy and Spectroscopy of Opto-Electronic Materials , 2006 .

[19]  Martin D. Dawson,et al.  Cathodoluminescence spectral mapping of III-nitride structures , 2004 .

[20]  A. Usikov,et al.  High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers , 2002 .

[21]  E. Yakimov,et al.  Electron-beam-induced-current study of defects in GaN; experiments and simulation , 2002 .

[22]  Fernando Ponce,et al.  Edge and screw dislocations as nonradiative centers in InGaN/GaN quantum well luminescence , 2001 .

[23]  V. Petrov.  REVIEWS OF TOPICAL PROBLEMS: Cathodoluminescence microscopy , 1996 .

[24]  E. Yakimov.  Modulated electron-beam-induced current and cathodoluminescence , 1994 .

[25]  C. Donolato.  A note on the spatial resolution of cathodoluminescence images , 1994 .

[26]  B. G. Yacobi,et al.  Cathodoluminescence scanning electron microscopy of semiconductors , 1986 .

[27]  H. Leamy,et al.  Charge collection scanning electron microscopy , 1982 .

[28]  E. Yakimov.  EBIC Characterization of Light Emitting Structures Containing InGaN/GaN MQW , 2008 .

[29]  P. Russell,et al.  Scanning Cathodoluminescence Microscopy , 2007 .

[30]  C. Donolato.  Contrast and resolution of SEM charge‐collection images of dislocations , 1979 .