Rational methodological approach to evaluation of dose resistance of CMOS microcircuits with respect to low intensity effects

A rational methodological approach to the evaluation of the total dose hardness of CMOS microcircuits with respect to low dose rate effects supported by the results of the simulation analysis and experimental studies of a wide range of products is presented. This approach makes it possible to choose the necessary and sufficient amount of radiation researches that provide accurate and informative engineering evaluation of radiation hardness of CMOS microcircuits for use in space hardware.

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