In order to support next generation ULSI devices, some super resolution techniques are developed. The super resolution technique is effective for smaller pattern but not for larger pattern. This is because the optimum dose is changed, due to the pattern characteristic. However, the z-image profile has sufficient focus latitude. To overcome this problem, the optical proximity correction (OPC) is effective. This phenomenon is observed in the conventional illumination as well as the other super resolution technique. Thus, we developed the OPC system. Using the parallel processing system, we can correct the memory device data in about 2 days. The active region reduction due to the optical diffraction was preferably compensated by the OPC system. Therefore, the OPC system can be applied to the practical use. The OPC system is applicable to the super resolution. Consequently, the applicability of the super resolution technique is significantly enhanced.