High power IGCT compact model with impact ionization effect

This paper presents the development and validation of a physics-based compact model of IGCT for application in optimization of circuit parameters and GCT wafer design. The model proposed can simulate aspects of high-voltage IGCTs including impact ionization. It uses a Fourier series solution for the ambipolar diffusion equation in the base region. The model's simulation results are validated by comparision with experiments.

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