Preliminary Results of Activated Sintering Mechanism and Grain Boundary Prewetting/Premelting in Nickel‐Doped Tungsten

Supported by prior lattice-gas and phase-field simulations, we proposed that nanoscale intergranular and surficial amorphous films in multicomponent ceramic materials can be treated as a case of combined interfacial prewetting and premelting. Consequently, a class of parallel interfacial phenomena, i.e., coupled interfacial adsorption and disordering, is anticipated to occur in multicomponent metallic alloys. An exploratory study was carried out wherein grain boundary segregation in a model binary metallic alloy (Ni-doped W) was characterized as a function of temperature and dopant concentration. Doped specimens were prepared using high purity chemicals, sintered in flowing H2/N2 mixture, and examined using Auger spectroscopy and electron microscopy. Preliminary results are presented and discussed with respect to a prewetting/premelting model versus the classical Langmuir-McLean and BET models. An additional goal of this study is to resolve the long-standing mystery of solid-state activated sintering mechanism for nickel-doped tungsten. Use of ultra-pure materials confirmed the occurrence of nickel activated sintering of tungsten in the solid-state. We demonstrated that, contrary to the previous belief, Ni-rich secondary bulk phase does not penetrate along GBs and the solid-state activator should be a nanoscale interfacial phase that does not appear in the bulk phase diagram. The solid-state activated sintering in the modelmore » metallic system of Ni-doped W is therefore attributed to the enhance diffusion in a coupled grain boundary disordering and adsorption region, analogous to activated sintering via accelerated mass transport in nanoscale intergranular and surficial amorphous film in the model oxide system of Bi2O3-doped ZnO.« less

[1]  Shaoqing Wang,et al.  Molecular Dynamics Study of Grain-Boundary-Induced Melting in B2 NiAl Using a Many-body Potential , 2009 .

[2]  R. M. Cannon,et al.  Nanometer-thick surficial films in oxides as a case of prewetting. , 2005, Langmuir : the ACS journal of surfaces and colloids.

[3]  Y. Chiang,et al.  Thermodynamic Stability of Intergranular Amorphous Films in Bismuth‐Doped Zinc Oxide , 2005 .

[4]  Y. Chiang,et al.  Model experiment on thermodynamic stability of retained intergranular amorphous films , 2005 .

[5]  Doh-Yeon Kim,et al.  Pore-boundary separation behavior during sintering of pure and Bi2O3-doped ZnO ceramics , 2004 .

[6]  R. M. Cannon,et al.  Abnormal Grain Growth in Alumina: Synergistic Effects of Yttria and Silica , 2003 .

[7]  E. .. Mittemeijer,et al.  Grain Boundary Phase Transitions in the Al–Mg System and Their Influence on High-Strain Rate Superplasticity , 2003 .

[8]  B. Straumal,et al.  Influence of the Grain Boundary Phase Transitions on the Diffusion-Related Properties , 2003 .

[9]  J. Warren,et al.  Phase field model of premelting of grain boundaries , 2001, cond-mat/0111069.

[10]  D. Seidman Subnanoscale Studies of Segregation at Grain Boundaries: Simulations and Experiments , 2002 .

[11]  W. Kaplan,et al.  Equilibrium Amorphous Silicon–Calcium–Oxygen Films at Interfaces in Copper–Alumina Composites Prepared by Melt Infiltration , 2001 .

[12]  Y. Chiang,et al.  Existence and stability of nanometer-thick disordered films on oxide surfaces , 2000 .

[13]  Doh-Yeon Kim,et al.  Activated sintering of nickel-doped tungsten: Approach by grain boundary structural transition , 2000 .

[14]  Y. Chiang,et al.  Equilibrium-thickness Amorphous Films on {} surfaces of Bi2O3-doped ZnO , 1999 .

[15]  Y. Chiang,et al.  Origin of Solid‐State Activated Sintering in Bi2O3‐Doped ZnO , 1999 .

[16]  J. Wettlaufer Impurity Effects in the Premelting of Ice , 1999 .

[17]  R. M. Cannon,et al.  High temperature colloidal behavior : Particles in liquid silicates , 1999 .

[18]  P. Wynblatt,et al.  Experimental evidence for a wetting transition in liquid GaPb alloys , 1996 .

[19]  P. Lejček,et al.  Thermodynamics and structural aspects of grain boundary segregation , 1995 .

[20]  John S. Wettlaufer,et al.  The premelting of ice and its environmental consequences , 1995 .

[21]  D. Clarke,et al.  Possible Electrical Double‐Layer Contribution to the Equilibrium Thickness of Intergranular Glass Films in Polycrystalline Ceramics , 1993 .

[22]  Michael J. Hoffmann,et al.  Influence of Secondary Phase Chemistry on Grain Boundary Film Thickness in Silicon Nitride / Einfluß der Sekundärphasenchemie auf die Korngrenzfilmdicke in Silicumnitrid , 1992 .

[23]  K. Ura Design concept of a new ultra-high-voltage electron microscope at Osaka University , 1991 .

[24]  F. Inoko,et al.  Grain boundary premelting in thin foils of deformed copper bicrystals , 1991 .

[25]  E. Rabkin,et al.  Penetration of tin and zinc along tilt grain boundaries 43° [100] in Fe-5 at.% Si alloy: Premelting phase transition? , 1991 .

[26]  C. Herzig,et al.  GRAIN BOUNDARY SELF AND IMPURITY DIFFUSION IN TUNGSTEN IN THE TEMPERATURE RANGE OF ACTIVATED SINTERING , 1990 .

[27]  T. Hsieh,et al.  Experimental study of grain boundary melting in aluminum , 1989 .

[28]  Kikuchi,et al.  Grain boundaries with impurities in a two-dimensional lattice-gas model. , 1987, Physical review. B, Condensed matter.

[29]  D. Clarke On the Equilibrium Thickness of Intergranular Glass Phases in Ceramic Materials , 1987 .

[30]  M. Moldover,et al.  A search for the prewetting line , 1986 .

[31]  J. Cahn,et al.  Grain-Boundary Melting Transition in a Two-Dimensional Lattice-Gas Model, , 1980 .

[32]  John W. Cahn,et al.  Critical point wetting , 1977 .

[33]  J. R. Moon,et al.  The nickel activated sintering of Tungsten , 1971 .

[34]  N. Lockington,et al.  The kinetics of metallic activation sintering of tungsten , 1967 .