Properties of YBCO on ${\rm LaMnO}_{3}$-Capped IBAD MgO-Templates Without Homo-Epitaxial MgO Layer

Previously, it has been well established that in an IBAD architecture for coated conductors, (1) LaMnO3 (LMO) buffer layers are structurally and chemically compatible with an underlying homo-epitaxial MgO layer and (2) high current density YBCO films can be grown on these LMO templates. In the present work, the homo-epi MgO layer has been successfully eliminated and a LMO cap layer was grown directly on the IBAD-MgO template. The performance of the LMO/IBAD-MgO samples has been qualified by depositing 1 mum-thick YBCO coatings by pulsed laser deposition. Electrical transport measurements of YBCO films on the standard (with homo-epi MgO) and simplified (without homo-epi MgO) IBAD architectures were carried out. The angular dependence of critical current density (J c) is similar for both IBAD architectures. XRD measurements indicate good, c-axis aligned YBCO films. Transmission electron microscopy (TEM) images reveal that microstructures of YBCO/LMO/IBAD-MgO and YBCO/LMO/homo-epi MgO/IBAD-MgO templates are similar. These results demonstrate the strong potential of using LMO as a single cap layer directly on IBAD-MgO for the development of a simplified IBAD architecture.

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