Polarization analysis of hot-carrier light emission in silicon
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Carlo Jacoboni | A. Lacaita | M. Fischetti | R. Brunetti | C. Jacoboni | L. Carbone | Rossella Brunetti | A Lacaita | L Carbone | M. Fischetti
[1] A. Lacaita,et al. On the bremsstrahlung origin of hot-carrier-induced photons in silicon devices , 1993 .
[2] S. Louie,et al. Self-consistent pseudopotential calculations for Si (111) surfaces: Unreconstructed (1×1) and reconstructed (2×1) model structures , 1975 .
[3] B. Ricco,et al. Hot-electron-induced photon energies in n-channel MOSFETs operating at 77 and 300 K , 1989, IEEE Electron Device Letters.
[4] Bude,et al. Hot-carrier luminescence in Si. , 1992, Physical review. B, Condensed matter.
[5] David J. Frank,et al. Monte Carlo analysis of semiconductor devices: the DAMOCLES program , 1990 .
[6] J. Bude,et al. Monte Carlo simulation of hot electron transport in Si using a unified pseudopotential description of the crystal , 1992 .
[7] H. Zappe,et al. Hot-electron electroluminescence in GaAs transistors , 1992 .
[8] B. Ricco,et al. Extended (1.1-2.9 eV) hot-carrier-induced photon emission in n-channel Si MOSFETs , 1991, IEEE Electron Device Letters.