论文信息 - Reliability of MOS LSl circuits

Reliability of MOS LSl circuits

MOS LSI circuits share many of the reliability problem associated with discrete semiconductors and medium-scale integrated circuits. However, because of the added complexity, larger chip size, and higher densities of MOS LSI circuits, different approaches are needed. A close working relationship between the designer, manufacturer, and user-the reliability triangle--is needed to generate the manufacturing controls, testing methods, and reliability assessment procedures and to optimize the performance and reliability of the MOS LSI circuits. Using this approach, the MOS LSI circuit, having more functions per external connection, can provide a more reliable system than one of equal complexity, based on discrete devices or less complex integrated circuits. Specific areas of reliability such as pattern sensitivity, manufacturing controls, assembly, packaging, and electrical testing have also been discussed.

G. P. Coverley | E. D. Colbourne | S. K. Behera | S. Behera

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