Effect of Coulomb scattering in n‐type silicon inversion layers

Experimental results of surface mobility (effective mobility) in n‐channel metal‐oxide‐semiconductor field‐effect transistors subjected to high electric field stress are presented. The electron mobility limited by Coulomb scattering is extracted from the experimental data comparing the measured effective mobility before and after the stress. The low‐temperature data (T=77 K) are discussed in terms of the Stern–Howard two‐dimensional Coulomb scattering theory in the electric quantum limit approximation.