Improved performance of MBE grown quantum dot lasers with asymmetric dots in a well design emitting near 1.3 /spl mu/m

Quantum dots emitting in the 1.3 /spl mu/m wavelength region can be realized following the dots in a well (DWELL) concept. By optimization of growth parameters as e.g. the V/III ratio and the design of the dot layers we could achieve a significant improvement of the dot characteristics as well as of the laser performance.

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