论文信息 - MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm) - 字舞流文

MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)

Jung-Suk Goo | Chang-Hoon Choi | Zhiping Yu | R. Dutton | C.H. Diaz | D. Vook | P. V. Voorde | Tae-Young Oh | A. Bayoumi | Min Cao | C. H. Diaz