论文信息 - Mechanism of polishing of SiO2 films by CeO2 particles - 字舞流文

Mechanism of polishing of SiO2 films by CeO2 particles

Tetsuya Hoshino | T. Hoshino | Kenzo Susa | Kurata Yasushi | Yuuki Terasaki | K. Susa | Kurata Yasushi | Yuuki Terasaki

[1] Shinichi Takagi,et al. Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films , 1997 .

[2] J. Samitier,et al. Analysis of geometrical effects on the behavior of transverse and longitudinal modes of amorphous silicon compounds , 1997 .

[3] A. Helebrant,et al. Kinetics of glass corrosion in acid solutions , 1996 .

[4] Y. Chabal,et al. Infrared‐absorption spectroscopy of Si(100) and Si(111) surfaces after chemomechanical polishing , 1995 .

[5] Y. Hayashi,et al. Ammonium-Salt-Added Silica Slurry for the Chemical Mechanical Polishing of the Interlayer Dielectric Film Planarization in ULSI's , 1995 .

[6] Y. Arimoto,et al. A pH-Controlled Chemical Mechanical Polishing Method for Thin Bonded Silicon-on-Insulator Wafers , 1995 .

[7] Krishna Rajan,et al. Near surface modification of silica structure induced by chemical/mechanical polishing , 1994, Journal of Materials Science.

[8] W. Bensch,et al. An FT-IR study of silicon dioxides for VLSI microelectronics , 1990 .

[9] L. Cook. Chemical processes in glass polishing , 1990 .

[10] P. Lange. Evidence for disorder‐induced vibrational mode coupling in thin amorphous SiO2 films , 1989 .

[11] Y. Wang,et al. General‐temperature series expansion for Ising systems , 1982 .

[12] S. Miyazaki,et al. Analysis of infrared attenuated total reflection spectra from thin SiO2 films on Si , 1995 .