Monte‐Carlo simulation of electron properties in rf parallel plate capacitively coupled discharges

Electron properties in a parallel plate capacitively coupled rf discharge are studied with results from a Monte‐Carlo simulation. Time averaged, spatially dependent electron distributions are computed by integrating, in time, electron trajectories as a function of position while oscillating the applied electric field at rf frequencies. The dc component of the sheath potential is solved for in a self‐consistent manner during the simulation. For conditions where the secondary emission coefficient for electrons from the electrodes is large, the electron distribution is spatially differentiated, being dominated by an e‐beam component near the electrodes while being nearly in equilibrium with the applied electric field in the body of the plasma. The dc component of the sheath potential is found to be a function of the ratio λ/d, where λ is the electron mean free path and d is the electrode spacing.

[1]  Mark J. Kushner,et al.  A kinetic study of the plasma‐etching process. II. Probe measurements of electron properties in an rf plasma‐etching reactor , 1982 .

[2]  J. Boeuf,et al.  A Monte Carlo analysis of an electron swarm in a nonuniform field: the cathode region of a glow discharge in helium , 1982 .

[3]  M. Mitchner,et al.  Partially ionized gases , 1973 .

[4]  K. Tachibana,et al.  Excitation of the C 3Πu state of N2 by low energy electrons , 1979 .

[5]  H. F. Winters,et al.  Total dissociation cross section of CF/sub 4/ and other fluoroalkanes for electron impact , 1982 .

[6]  A. V. Phelps,et al.  Comparative calculations of electron-swarm properties in N2 at moderate E/N values , 1982 .

[7]  J. Coburn,et al.  Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds , 1979 .

[8]  V. M. Donnelly,et al.  Laser diagnostics of plasma etching: Measurement of Cl+2 in a chlorine discharge , 1982 .

[9]  R. Morgan The rf voltage/current characteristics and related de negative bias properties of an electrotech flat bed plasma etcher , 1982 .

[10]  James Dillon Cobine,et al.  Gaseous conductors : theory and engineering applications , 1958 .

[11]  J. L. Franklin,et al.  Partitioning of excess energy in dissociative resonance capture processes , 1974 .

[12]  A. Steckl,et al.  Plasma etching of sputtered Mo and MoSi2 thin films in NF3 gas mixtures , 1982 .

[13]  J. Lucas A theoretical calculation of electron swarm properties in helium , 1972 .

[14]  J. L. Vossen,et al.  Glow Discharge Phenomena in Plasma Etching and Plasma Deposition , 1979 .

[15]  Y. Itikawa The Born Cross Section for Vibrational Excitation of a Polyatomic Molecule by Electron Collisions , 1974 .

[16]  B. Warner,et al.  Metal‐vapor production by sputtering in a hollow‐cathode discharge: Theory and experiment , 1979 .

[17]  M. Naidu,et al.  Mobility, diffusion and attachment of electrons in perfluoroalkanes , 1972 .

[18]  R. H. Burton,et al.  Carbon tetrachloride plasma etching of GaAs and InP: A kinetic study utilizing nonperturbative optical techniques , 1982 .

[19]  B. Chapman,et al.  Glow Discharge Processes: Sputtering and Plasma Etching , 1980 .

[20]  C. J. Mogab,et al.  Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas , 1978 .

[21]  J. Coburn,et al.  Positive‐ion bombardment of substrates in rf diode glow discharge sputtering , 1972 .

[22]  Vincent M. Donnelly,et al.  The design of plasma etchants , 1981 .

[23]  K. F. Sander Theory of a thick dynamic positive-ion sheath , 1969, Journal of Plasma Physics.