Thermoelectric Characteristics of the Thermopile Sensors with Variations of the Width and the Thickness of the Electrodeposited Bismuth-Telluride and Antimony-Telluride Thin Films

Thermopile sensors were processed on glass substrates by using successive electrodeposition of p-type Sb-Te and n-type Bi-Te thin films, and their thermoelectric characteristics were measured. The thermopile sensor, consisting of the p-n legs of 2 μm-thickness and 50 μm-width, exhibited the sensitivity of 24.8 mV/K. By changing the width of the p-n thin-film legs from 50 to 100 μm, the sensitivity decreased to 15.4 mV/K because of less pairs of the p-n thin-film legs in the thermopile. With increasing the thickness of the thin-film legs from 2 to 5 μm, the sensitivity was improved to 36.5 mV/K due to higher Seebeck coefficients of the 5 μm-thick Bi-Te and Sb-Te films than those of the 2 μm-thick films.

[1]  Makoto Ishida,et al.  Fabrication of Thermoelectric Sensor Using Silicon-on-Insulator Structure , 2007 .

[2]  Ctirad Uher,et al.  Thermoelectric performance of films in the bismuth-tellurium and antimony-tellurium systems , 2005 .

[3]  Yasuhiko Muramatsu,et al.  Electric and thermoelectric properties of electrodeposited bismuth telluride (Bi2Te3) films , 2004 .

[4]  N. Stein,et al.  Comparative study of the electrochemical preparation of Bi2Te3, Sb2Te3, and (BixSb1−x)2Te3 films , 2005 .

[5]  Thickness and temperature dependence of electrical properties of Bi2(Te0.1Se0.9)3 thin films , 1999 .

[6]  Das,et al.  Size and temperature effects on the thermoelectric power and electrical resistivity of bismuth telluride thin films. , 1988, Physical review. B, Condensed matter.

[7]  A. Kellock,et al.  Electrodeposition of SbTe Phase-Change Alloys , 2008 .

[8]  Tae-Sung Oh,et al.  Thermoelectric properties of the bismuth–antimony–telluride and the antimony–telluride films processed by electrodeposition for micro-device applications , 2009 .

[9]  Jerry R. Meyer,et al.  Structural and thermoelectric transport properties of Sb2Te3 thin films grown by molecular beam epitaxy , 2002 .

[10]  C. R. Tellier,et al.  A theoretical description of grain boundary electron scattering by an effective mean free path , 1978 .

[11]  A. Foucaran,et al.  Electrical and Thermoelectrical Properties of Sb2Te3 Prepared by the Metal-Organic Chemical Vapor Deposition Technique , 1999 .

[12]  José Higino Correia,et al.  Thermoelectric microstructures of Bi2Te3/Sb2Te3 for a self-calibrated micro-pyrometer , 2006 .

[13]  R. Sathyamoorthy,et al.  Thermal sensors based on Sb2Te3 and (Sb2Te3)70(Bi2Te3)30 thin films , 2008 .

[14]  F. D. Rosi,et al.  Compound tellurides and their alloys for peltier cooling—A review , 1972 .

[15]  R. Wolffenbuttel,et al.  Design and fabrication of on-chip integrated polySiGe and polySi Peltier devices , 2000 .

[16]  A. W. van Herwaarden,et al.  The seebeck effect in silicon ICs , 1984 .

[17]  A. Bund,et al.  Electrochemical deposition of Bi2Te3 for thermoelectric microdevices , 2003 .