d-core transitions in ZnTe, CdTe and HgTe

[1]  Johnson,et al.  Synchrotron radiation study of Cd1-xMnxTe (0 <= x <= 0.65). , 1986, Physical Review B (Condensed Matter).

[2]  A. Balzarotti,et al.  Optical Properties in the High Energy Range , 1986 .

[3]  J. A. Silberman,et al.  Angle‐resolved photoemission spectroscopy of Hg1−xCdxTe , 1985 .

[4]  M. Cardona,et al.  Ellipsometric studies of electronic interband transitions in Cd x Hg 1-x Te , 1984 .

[5]  J. A. Silberman,et al.  Unusual behavior of Hgl−xCdxTe and its explanation☆ , 1983 .

[6]  K. Hass,et al.  Electronic structure ofHg1−xCdxTe , 1983 .

[7]  A. Kisiel,et al.  Reflectivity spectra of monocrystalline CdxHg1-xTe as a function of composition and temperature , 1983 .

[8]  M. Vecchi,et al.  The delocalized d-electrons in the semimagnetic alloy Cd1−xMnxTe , 1982 .

[9]  J. A. Silberman,et al.  UPS study of the electronic structure of Hg1−xCdx Te: Breakdown of the virtual crystal approximation , 1982 .

[10]  Arden Sher,et al.  CPA band calculation for (Hg, Cd) Te , 1982 .

[11]  M. Podgorny,et al.  Energy Bands and Optical Properties of HgTe and CdTe Calculated on the Basis of the Tight‐Binding Model with Spin–Orbit Interaction , 1980 .

[12]  M. Schlüter,et al.  Excitonic Shifts of Quasi-Atomic Optical Core to Conduction-Band Transitions in Pbi2 and Bii3 , 1977 .

[13]  P. Thiry,et al.  Electron-hole interaction of the d core levels in III–V semiconductors , 1976 .

[14]  James R. Chelikowsky,et al.  Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors , 1976 .

[15]  D. Lynch,et al.  Electroreflectance of GaAs and GaP to 27 eV using synchrotron radiation , 1975 .

[16]  A. Kisiel,et al.  Temperature Dependence of E1 and E1 + Δ1 Maxima in the Fundamental Reflection for Cdx Hg1‐xTe Solid Solutions , 1975 .

[17]  M. Schlüter,et al.  Synchrotron radiation measurements and calculation of core to conduction level transitions in lead chalcogenides , 1975 .

[18]  D. Eastman,et al.  Photoemission spectroscopy using synchrotron radiation. I. Overviews of valence-band structure for Ge, GaAs, GaP, InSb, ZnSe, CdTe, and Agl , 1974 .

[19]  G. Guizzetti,et al.  Thermoreflectance spectra of diamond and zinc-blende semiconductors in the vacuum-ultraviolet region , 1974 .

[20]  D. A. Shirley,et al.  Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy. [GaSb; InSb] , 1974 .

[21]  M. Cardona,et al.  Photoemission and density of valence states of the II–VI compounds. I. ZnTe, CdSe, CdTe, HgSe, and HgTe , 1973 .

[22]  J. Freeouf.  Far-Ultraviolet Reflectance of II-VI Compounds and Correlation with the Penn-Phillips Gap , 1973 .

[23]  K. Taniguchi,et al.  Electroreflectance Study of CdxHg1-xTe , 1973 .

[24]  James R. Chelikowsky,et al.  Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende Semiconductors , 1973 .

[25]  D. Chadi,et al.  Reflectivities and Electronic Band Structures of CdTe and HgTe , 1972 .

[26]  D. Langer,et al.  uv photoemission measurements of the upper d levels in the IIB-VIA compounds , 1972 .

[27]  A. Kisiel,et al.  Relativistic effects on energies of optical transitions in CdxHg1-xTe alloys , 1972 .

[28]  D. Langer,et al.  Electronic Core Levels of theIIB−VIACompounds , 1971 .

[29]  Marvin L. Cohen,et al.  Calculated and Measured Reflectivity of ZnTe and ZnSe , 1970 .

[30]  A. Kisiel,et al.  Fundamental Reflectivity Spectrum of CdxHg1−xTe Crystals from 1.5 to 4 eV , 1969 .

[31]  A. G. Thompson,et al.  Thermoreflectance in Semiconductors , 1968 .

[32]  Fred H. Pollak,et al.  Electroreflectance at a Semiconductor-Electrolyte Interface , 1965 .

[33]  G. B. Wright,et al.  Reflectivity of HgSe and HgTe from 4 to 12 eV at 12 and 300°K , 1964 .

[34]  M. Cardona,et al.  Fundamental Reflectivity and Band Structure of ZnTe, CdTe, and HgTe , 1963 .