X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices

Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2 Mrad(SiO<sub>2</sub>) show less than 11% change in current ratio at 1.2 V. The read-out window of programmed PUFs decreases significantly at high-dose proton irradiation, and then recovers back to the original value after annealing. The proton test results for the <italic>p</italic>FET selector, the <italic>unbroken</italic> <italic>n</italic>FET, and the <italic>broken</italic> <italic>n</italic>FET indicate that the threshold-voltage shift of the <italic>p</italic>FET selector contributes mainly to the degradation of the PUF.

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