375‐GHz‐bandwidth photoconductive detector

We report the development of a new, integrable photoconductive detector, based on low‐temperature‐grown GaAs, that has a response time of 1.2 ps and a 3‐dB bandwidth of 375 GHz. The responsivity is 0.1 A/W. Signal amplitudes up to 6 V can be produced with virtually no degradation in response time.

[1]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[2]  Naomi J. Halas,et al.  Capacitance free generation and detection of subpicosecond electrical pulses on coplanar transmission lines , 1988 .

[3]  P. Vettiger,et al.  105-GHz bandwidth metal-semiconductor-metal photodiode , 1988, IEEE Electron Device Letters.

[4]  M. Hollis,et al.  Picosecond GaAs-Based Photoconductive Optoelectronic Detectors , 1989, OSA Proceedings on Picosecond Electronics and Optoelectronics.

[5]  Jean-Luc Pelouard,et al.  Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode pattern , 1989 .

[6]  Gerard Mourou,et al.  High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs , 1990 .

[7]  J. Whitaker,et al.  External electro-optic integrated circuit probing , 1990 .

[8]  M. Littlejohn,et al.  Intrinsic and extrinsic response of GaAs metal-semiconductor-metal photodetectors , 1990, IEEE Photonics Technology Letters.

[9]  Hermann Schumacher,et al.  Transit-time limited frequency response of InGaAs MSM photodetectors , 1990 .

[10]  J. Rosenzweig,et al.  Picosecond pulse response characteristics of GaAs metal‐semiconductor‐metal photodetectors , 1991 .

[11]  Subpicosecond pulse propagation on coplanar waveguides: experiment and simulation , 1991, IEEE Microwave and Guided Wave Letters.

[12]  Gerard Mourou,et al.  1.4 ps rise‐time high‐voltage photoconductive switching , 1991 .