Ferroelectric‐Like Behavior in TaN/High‐k/Si System Based on Amorphous Oxide
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G. Han | Weihua Wang | Yitong Wang | Yahui Cheng | Ze Feng | H. Liu | F. Lu | Hu Wang | Yang Shen | Zhiyun Li | Yi Cui | Yue Peng | Xiao Chen | H. Dong | An Dingsun | Meiyi Jing