论文信息 - ESD robustness studies on the double snapback characteristics of an LDMOS with an embedded SCR

ESD robustness studies on the double snapback characteristics of an LDMOS with an embedded SCR

Criterion for the second snapback of an LDMOS with an embedded SCR is given based on parasitic parameter analysis. According to this criterion, three typical structures are compared by numerical simulation and structural parameters which influence the second snapback are also analyzed to optimize the ESD characteristics. Experimental data showed that, as the second snapback voltage decreased from 25.4 to 8.1 V, the discharge ability of the optimized structure increased from 0.57 to 3.1 A.

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